BSH201 features symbol quick reference data ? low threshold voltage v ds = -60 v ? fast switching ? logic level compatible i d = -0.3 a ? subminiature surface mount package r ds(on) 2.5 w (v gs = -10 v) general description pinning sot23 p-channel, enhancement mode, pin description logic level, field-effect power transistor. this device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain the BSH201 is supplied in the sot23 subminiature surface mounting package. limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit v ds drain-source voltage - -60 v v dgr drain-gate voltage r gs = 20 k w - -60 v v gs gate-source voltage - 20 v i d drain current (dc) t a = 25 ?c - -0.3 a t a = 100 ?c - -0.19 a i dm drain current (pulse peak value) t a = 25 ?c - -1.2 a p tot total power dissipation t a = 25 ?c - 0.417 w t a = 100 ?c - 0.17 w t stg , t j storage & operating temperature - 55 150 ?c thermal resistances symbol parameter conditions typ. max. unit r th j-a thermal resistance junction to fr4 board, minimum 300 - k/w ambient footprint d g s 1 2 3 top view 1 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123 product specification
BSH201 electrical characteristics t j = 25?c unless otherwise specified symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown v gs = 0 v; i d = -10 m a -60 - - v voltage v gs(to) gate threshold voltage v ds = v gs ; i d = -1 ma -1 -1.9 - v t j = 150?c -0.4 - - v r ds(on) drain-source on-state v gs = -10 v; i d = -160 ma - 2.1 2.5 w resistance v gs = -4.5 v; i d = -80 ma - 2.7 3.75 w v gs = -10 v; i d = -160 ma; t j = 150?c - 3.6 4.25 w g fs forward transconductance v ds = -48 v; i d = -160 ma 0.1 0.35 - s i gss gate source leakage current v gs = 20 v; v ds = 0 v - 10 100 na i dss zero gate voltage drain v ds = -48 v; v gs = 0 v; - -50 -100 na current t j = 150?c - -1.3 -10 m a q g(tot) total gate charge i d = -0.5 a; v dd = -10 v; v gs = -10 v - 3 - nc q gs gate-source charge - 0.5 - nc q gd gate-drain (miller) charge - 0.4 - nc t d on turn-on delay time v dd = -10 v; i d = -0.5 a; - 2 - ns t r turn-on rise time v gs = -10 v; r g = 6 w - 4.5 - ns t d off turn-off delay time resistive load - 45 - ns t f turn-off fall time - 20 - ns c iss input capacitance v gs = 0 v; v ds = -48 v; f = 1 mhz - 70 - pf c oss output capacitance - 15 - pf c rss feedback capacitance - 5 - pf reverse diode limiting values and characteristics t j = 25?c unless otherwise specified symbol parameter conditions min. typ. max. unit i dr continuous reverse drain t a = 25 ?c - - -0.3 a current i drm pulsed reverse drain current - - -1.2 a v sd diode forward voltage i f = -0.38 a; v gs = 0 v - -0.97 -1.3 v t rr reverse recovery time i f = -0.25 a; -di f /dt = 100 a/ m s; - 38 - ns q rr reverse recovery charge v gs = 0 v; v r = -48 v - 58 - nc product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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